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    IEDM 2020 - 2020 IEEE International Electron Devices Meeting (IEDM)

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    Category IEDM 2020

    Deadline: June 27, 2020 | Date: December 14, 2020-December 16, 2020

    Venue/Country: San Francisco, U.S.A

    Updated: 2011-03-28 12:56:46 (GMT+9)

    Call For Papers - CFP

    Papers in the following areas are requested:


    Papers are solicited in the area of CMOS devices covering device physics, novel MOS device structures, circuit/device interaction and co-optimization, CMOS scaling issues, high performance, low power, analog/RF devices, and CMOS platform technology and manufacturing issues, such as DFM and process control. Other topics of interest are SOI, high-mobility channel devices such as strained silicon and SiGe MOS devices, and 3D integrated circuits.


    Papers are solicited in all areas of yield and reliability, both front-end and back-end of the process. Topics include but are not limited to hot carriers, gate dielectric wearout and breakdown, process charging damage, latch-up, ESD, soft errors, noise and mismatch behavior, bias temperature instabilities, and reliability of high-k and low-k materials, circuits, and packaging. Other topics include interconnect reliability, electromigration, the impact of back-end processing on devices, chip-packaging interaction, manufacturing technologies for reliability, physics of failure analysis, as well as reliability issues for memory and logic technologies and characterization and measurement.


    Papers are solicited on critical devices, structures, and integration for imaging, displays, detectors, sensors, and micro electromechanical systems (MEMS). A subset of key topics in the Displays and Sensors area includes CMOS imagers, CCD's, TFT's, organic, amorphous, and polycrystalline devices, vacuum microelectronics, emissive displays and sensors for chemical, molecular and biological detection. Topics of interest in the MEMS area include resonators, switches, and passives for RF applications, integrated sensors, micro-optical devices, micro-fluidic and biomedical devices, micro power generators and energy harvesting devices, with particular emphasis on integrated implementations. Other relevant subjects include design, fabrication, reliability, theory, and modeling.


    Papers are solicited covering memory related technology from the novel memory cell concepts to the fully integrated memories and manufacturing. Areas of interest include volatile and nonvolatile memories, processes for advanced memories, novel memory cells include NEMS-based device, 3D integration, reliability and modeling. Other topics of interest are memory array optimization, 3D memory architecture, novel reading/program/erase schemes and solid state drive (SSD) application.


    Papers are solicited in the areas of analytical, numerical, and statistical approaches to modeling electronic, optical and multiphysical devices, their isolation and interconnection. Topics include physical and compact models for devices and interconnects, modeling fabrication processes and equipment, simulation algorithms, process characterization, parameter extraction, early compact models for advanced technologies, performance evaluation, design for manufacturing, reliability and technology benchmarking methodology. Papers on the modeling of interactions between process, device and circuit technology are solicited. Submissions should advance the art of modeling and simulation or apply existing techniques to gain new insights into devices.


    Papers are requested on front-end and back-end process modules for fabrication of logic, memory, and 3D integrated circuits on silicon and non-silicon technologies. Topics related to front-end processing include substrate technologies, interface passivation, lithography, etching, isolation technologies, thin dielectrics, high dielectric constant materials and metal electrodes for transistors and MIM capacitors, shallow junctions, silicides, self-assembly techniques and new materials for memory and logic applications. Topics related to back-end processing include conductor systems, low dielectric constant materials, contact and via processes, barrier materials, planarization, design considerations for multilevel interconnects, and advanced packaging.


    Papers are solicited in the areas of compound semiconductors (GaAs, InP, GaN, SiC, SiGe, Antimonides and their related alloys) with electronic and optoelectronic device applications. Papers are also solicited on discrete and integrated high power/current/voltage devices including those on silicon. Topics include FETs, HBTs, LEDs, lasers, external modulators, high power, RF, and microwave and millimeter wave devices. Also of special interest are ballistic and quantum effects, and optoelectronic integrated circuits, optical interconnects, photovoltaics, photonic bandgap structures and crystals, and integrated RF components including inductors, capacitors, and switches.


    Papers are solicited on novel solid state and nanoelectronic devices. Examples include on nanoelectronic devices including carbon based devices, nanotubes, nanowires, and quantum dots; nanodevices for energy harvesting and storage, spintronic and other non-charge based devices; NEMS-based logic devices; and molecular devices. Also other areas of interest are new device characterization and performance evaluation methodologies.

    Keywords: Accepted papers list. Acceptance Rate. EI Compendex. Engineering Index. ISTP index. ISI index. Impact Factor.
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